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FDMA1028NZ Dual N-Channel PowerTrench(R) MOSFET
May 2006
FDMA1028NZ
Dual N-Channel PowerTrench(R) MOSFET
General Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 D2 * RoHS Compliant
Features
* 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V RDS(ON) = 86 m @ VGS = 2.5V * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
S1 G1
1 2 3
6 5 4
D1 G2 S2
D1 G2 S2
MicroFET 2x2
D2
Absolute Maximum Ratings
Symbol
VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W C
3.7 6 1.4 0.7 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b) (Note 1c) (Note 1d)
86 (Single Operation) 173 (Single Operation) 69 (Dual Operation) 151 (Dual Operation) C/W
Package Marking and Ordering Information
Device Marking 028 Device FDMA1028NZ Reel Size 7'' Tape width 8mm Quantity 3000 units
(c)2006 Fairchild Semiconductor Corporation
FDMA1028NZ Rev B (W)
FDMA1028NZ Dual N-Channel PowerTrench(R) MOSFET
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V
Min Typ Max Units
20 15 1 10 V mV/C A A
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 3.7 A ID = 3.3 A VGS = 2.5 V, VGS= 4.5 V, ID = 3.7 A, TJ=125C VDS = 10 V, ID = 3.7 A
0.6
1.0 -4 37 50 53 16
1.5
V mV/C
68 86 90
m
gFS
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
340 80 60
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
8 8 14 3
16 16 26 6 6
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 3.7 A,
4 0.7 1.1
FDMA1028NZ Rev B (W)
FDMA1028NZ Dual N-Channel PowerTrench(R) MOSFET
Electrical Characteristics
Symbol
IS VSD trr Qrr
TA = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
1.1 A V ns nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.1 A IF = 3.7 A, dIF/dt = 100 A/s
(Note 2)
0.7 11 2
1.2
Notes: 2 1. RJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 173C/W when mounted on a minimum pad of 2 oz copper (d) RJA = 151C/W when mounted on a minimum pad of 2 oz copper (c) RJA = 69C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
a) 86oC/W when mounted on a 1in2 pad of 2 oz copper
b) 173oC/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDMA1028NZ Rev B (W)
FDMA1028NZ Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics
6
VGS = 4.5V 2.5V 2.0V
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 2.0V
5 ID, DRAIN CURRENT (A)
3.5V 3.0V
1.8 1.6 1.4
2.5V
4 3 2 1
1.5V
1.2 1 0.8
3.0V 3.5V 4.0V 4.5V
0 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.2
0
1
2 3 4 ID, DRAIN CURRENT (A)
5
6
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.13 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
ID = 3.7A VGS = 4.5V
ID = 1.85A
0.11
0.09
0.07
TA = 125 C
o
0.05
TA = 25 C
o
0.03 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
6 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
5 ID, DRAIN CURRENT (A) 4 3 2
TA = 125 C
o
10 1 0.1
TA = 125oC
0.01
25 C
o
-55oC
o
1
25 C
0.001
-55 C
o
0 0.5 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) 1 2.5
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDMA1028NZ Rev B (W)
FDMA1028NZ Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics
10
VGS, GATE-SOURCE VOLTAGE (V)
500
ID = 3.7A VDS = 5V 15V f = 1MHz VGS = 0 V
8
400 CAPACITANCE (pF)
10V
6
300
Ciss
4
200
Coss
2
100
Crss
0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10
0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RJA = 173C/W TA = 25C
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC VGS = 4.5V SINGLE PULSE RJA = 173C/W TA = 25C
40
30
1
20
0.1
10
0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.0001
0.001
0.01
0.1 1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) * RJA RJA =173 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
0.01 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDMA1028NZ Rev B (W)
FDMA1028NZ Dual N-Channel PowerTrench(R) MOSFET
FDMA1028NZ Rev B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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